IndiumV3, Chine, Analysis, bibRecord, 000080

The effect of secondary electrons on emission

Identifieur interne : 000080 ( Chine/Analysis ); précédent : 000079; suivant : 000081

The effect of secondary electrons on emission

Auteurs : RBID : Pascal:13-0250395

Descripteurs français

Pascal (Inist)
- Electron secondaire, Emission électronique, Modélisation, Injection électron, Constante diélectrique, Mobilité porteur charge, Multicouche, Oxyde de silicium, Effet champ électrique, Oxyde d'étain, Oxyde d'indium, Avalanche, Eclairement, Etat solide, Cathodoluminescence, SiO2.

English descriptors

KwdEn :
- Avalanche, Carrier mobility, Cathodoluminescence, Electric field effects, Electron emission, Electron injection, Illumination, Indium oxide, Modelling, Multilayers, Permittivity, Secondary electron, Silicon oxides, Solid state, Tin oxide.

Abstract

The effect of secondary electrons on emission is studied by modelling the electrons behaviours in multi-layers, including electron injection, transportation, multiplication, and emission. The dielectric constant model and carrier mobility model are presented to describe the voltage distribution in multi-layers for the non-current injection and current injection respectively. After injection, the electrons are accelerated in SiO₂, where they collide with the electrons, generating secondary electrons, consequently contributing to emission. A multiplying factor M is introduced to describe the secondary electrons multiplication in certain electrical field strength. The prediction was further proved by comparing two groups of devices with and without the accelerating layer: ITO/MEH-PPV/SiO₂/Al and ITO/MEH-PPV/BCP/Al. The current avalanche observed in current-illumination experiment is a proof of the existence and contribution of secondary electrons.

Links toward previous steps (curation, corpus...)

to stream Main, to step Corpus: 000992
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to stream Chine, to step Extraction: 000080

Links to Exploration step

Pascal:13-0250395

Le document en format XML

<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">The effect of secondary electrons on emission</title>
<author><name>YUAN LI</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Institute of Optoelectronics Technology, Beijing Jiaotong University</s1>
<s2>Beijing 100044</s2>
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<country>République populaire de Chine</country>
<placeName><settlement type="city">Pékin</settlement>
</placeName>
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</author>
<author><name>SULING ZHAO</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Institute of Optoelectronics Technology, Beijing Jiaotong University</s1>
<s2>Beijing 100044</s2>
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<country>République populaire de Chine</country>
<placeName><settlement type="city">Pékin</settlement>
</placeName>
</affiliation>
</author>
<author><name>ZHENG XU</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Institute of Optoelectronics Technology, Beijing Jiaotong University</s1>
<s2>Beijing 100044</s2>
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<country>République populaire de Chine</country>
<placeName><settlement type="city">Pékin</settlement>
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<author><name>FUJUN ZHANG</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Institute of Optoelectronics Technology, Beijing Jiaotong University</s1>
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<author><name>DEWEI ZHAO</name>
<affiliation wicri:level="1"><inist:fA14 i1="02"><s1>School of Electrical and Electronic Engineering, Nanyang Technological University, Nanyang Avenue</s1>
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<author><name>JINGLU SONG</name>
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<author><name>JINZHAO HUANG</name>
<affiliation wicri:level="1"><inist:fA14 i1="04"><s1>School of Physics, University of Jinan</s1>
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<country>République populaire de Chine</country>
<wicri:noRegion>Jinan 250022, Shandong Province</wicri:noRegion>
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<author><name>GUANG YAN</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Institute of Optoelectronics Technology, Beijing Jiaotong University</s1>
<s2>Beijing 100044</s2>
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<country>République populaire de Chine</country>
<placeName><settlement type="city">Pékin</settlement>
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</author>
<author><name>CHAO KONG</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Institute of Optoelectronics Technology, Beijing Jiaotong University</s1>
<s2>Beijing 100044</s2>
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<country>République populaire de Chine</country>
<placeName><settlement type="city">Pékin</settlement>
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</author>
<author><name>XURONG XU</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Institute of Optoelectronics Technology, Beijing Jiaotong University</s1>
<s2>Beijing 100044</s2>
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<country>République populaire de Chine</country>
<placeName><settlement type="city">Pékin</settlement>
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<publicationStmt><idno type="inist">13-0250395</idno>
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<seriesStmt><idno type="ISSN">0022-2313</idno>
<title level="j" type="abbreviated">J. lumin.</title>
<title level="j" type="main">Journal of luminescence</title>
</seriesStmt>
</fileDesc>
<profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Avalanche</term>
<term>Carrier mobility</term>
<term>Cathodoluminescence</term>
<term>Electric field effects</term>
<term>Electron emission</term>
<term>Electron injection</term>
<term>Illumination</term>
<term>Indium oxide</term>
<term>Modelling</term>
<term>Multilayers</term>
<term>Permittivity</term>
<term>Secondary electron</term>
<term>Silicon oxides</term>
<term>Solid state</term>
<term>Tin oxide</term>
</keywords>
<keywords scheme="Pascal" xml:lang="fr"><term>Electron secondaire</term>
<term>Emission électronique</term>
<term>Modélisation</term>
<term>Injection électron</term>
<term>Constante diélectrique</term>
<term>Mobilité porteur charge</term>
<term>Multicouche</term>
<term>Oxyde de silicium</term>
<term>Effet champ électrique</term>
<term>Oxyde d'étain</term>
<term>Oxyde d'indium</term>
<term>Avalanche</term>
<term>Eclairement</term>
<term>Etat solide</term>
<term>Cathodoluminescence</term>
<term>SiO2</term>
</keywords>
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<front><div type="abstract" xml:lang="en">The effect of secondary electrons on emission is studied by modelling the electrons behaviours in multi-layers, including electron injection, transportation, multiplication, and emission. The dielectric constant model and carrier mobility model are presented to describe the voltage distribution in multi-layers for the non-current injection and current injection respectively. After injection, the electrons are accelerated in SiO<sub>2</sub>
, where they collide with the electrons, generating secondary electrons, consequently contributing to emission. A multiplying factor M is introduced to describe the secondary electrons multiplication in certain electrical field strength. The prediction was further proved by comparing two groups of devices with and without the accelerating layer: ITO/MEH-PPV/SiO<sub>2</sub>
/Al and ITO/MEH-PPV/BCP/Al. The current avalanche observed in current-illumination experiment is a proof of the existence and contribution of secondary electrons.</div>
</front>
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<fA11 i1="01" i2="1"><s1>YUAN LI</s1>
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<fA11 i1="02" i2="1"><s1>SULING ZHAO</s1>
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<fA11 i1="03" i2="1"><s1>ZHENG XU</s1>
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<fA11 i1="04" i2="1"><s1>FUJUN ZHANG</s1>
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<fA11 i1="05" i2="1"><s1>DEWEI ZHAO</s1>
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<fA11 i1="06" i2="1"><s1>JINGLU SONG</s1>
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<fA11 i1="07" i2="1"><s1>JINZHAO HUANG</s1>
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<fA11 i1="08" i2="1"><s1>GUANG YAN</s1>
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<fA11 i1="09" i2="1"><s1>CHAO KONG</s1>
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<sZ>6 aut.</sZ>
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<fC01 i1="01" l="ENG"><s0>The effect of secondary electrons on emission is studied by modelling the electrons behaviours in multi-layers, including electron injection, transportation, multiplication, and emission. The dielectric constant model and carrier mobility model are presented to describe the voltage distribution in multi-layers for the non-current injection and current injection respectively. After injection, the electrons are accelerated in SiO<sub>2</sub>
, where they collide with the electrons, generating secondary electrons, consequently contributing to emission. A multiplying factor M is introduced to describe the secondary electrons multiplication in certain electrical field strength. The prediction was further proved by comparing two groups of devices with and without the accelerating layer: ITO/MEH-PPV/SiO<sub>2</sub>
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<s5>41</s5>
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<s5>42</s5>
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<s5>43</s5>
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<s5>44</s5>
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<s5>44</s5>
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<s5>44</s5>
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<s5>45</s5>
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<s5>45</s5>
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<s5>46</s5>
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<s5>63</s5>
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<s5>64</s5>
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<s5>66</s5>
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<fC03 i1="12" i2="X" l="SPA"><s0>Avalancha</s0>
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<fC03 i1="13" i2="3" l="FRE"><s0>Eclairement</s0>
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<fC03 i1="14" i2="X" l="FRE"><s0>Etat solide</s0>
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<fC03 i1="14" i2="X" l="ENG"><s0>Solid state</s0>
<s5>68</s5>
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<s5>68</s5>
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<s5>69</s5>
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<fC03 i1="16" i2="3" l="FRE"><s0>SiO2</s0>
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<fN44 i1="01"><s1>OTO</s1>
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<fN82><s1>OTO</s1>
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The effect of secondary electrons on emission

The effect of secondary electrons on emission

Descripteurs français

English descriptors

Abstract

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